| PART |
Description |
Maker |
| SSTS20L60CT |
High Junction Temperature
|
Silikron Semiconductor ...
|
| SSTS20100I |
High Junction Temperature
|
Silikron Semiconductor ...
|
| SSMD60200CT SSMD60200CTF |
High Junction Temperature
|
Silikron Semiconductor ...
|
| SSBD1045G |
High Junction Temperature
|
Silikron Semiconductor ...
|
| SSBD1045CTL |
High Junction Temperature
|
Silikron Semiconductor ...
|
| SSTS3045CTF |
High Junction Temperature
|
Silikron Semiconductor Co.,LTD.
Silikron Semiconductor ...
|
| SSMD3030CT |
High Junction Temperature
|
Silikron Semiconductor ...
|
| STPS20SM80C |
High junction temperature capability
|
STMicroelectronics
|
| NESG2101M05-T1 NESG2101M05 |
NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR
|
NEC Corp.
NEC[NEC]
|
| NESG3031M14NBSP NESG3031M14-T3 NESG3031M14 |
From old datasheet system
NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR
|
NEC[NEC]
|
| NESG2031M05-T1 NESG2031M05 |
NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR 邻舍npn型硅锗高频陈德良SIS的职权范
From old datasheet system
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| LSIC2SD120A15 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C.
|
Littelfuse
|
